BFP74F

www.DataSheet4U.com BFP740F NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.75 dB at 6 GHz High maximum stable gain Gms = 27.5 dB at 1.8 GHz Gold metallization for extra high reliability 150 GHz fT-Silicon Germanium technology ESD (Electrostatic discharge) sensitive device, observe handling precaution! Top View 4 3 3 4 1 2 XYs 1 2 Direction of Unreeling Type BFP740F Maximum Ratings Parameter Marking R7s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO Package TSFP-4 Value Unit - Collector-emitter voltage TA > 0°C TA ≤ 0°C V 4 3.5 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 90°C VCES VCBO VEBO IC IB Ptot Tj TA T stg 13 13 1.2 30 3 160 150 -65 ... 150 -65 ... 150 mW °C mA Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 2005-11-08 1 www.DataSheet4U.com BFP740F Thermal Resistance Parameter Symbol RthJS Value ≤ 370 Unit Junction - soldering point1) K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter c...