BFQ 19S
NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications...
BFQ 19S
NPN Silicon RF Transistor For low noise, low distortion broadband
amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFQ 19S Marking Ordering Code FGs Q62702-F1088 Pin Configuration 1=B 2=C 3=E Package SOT-89
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 75 12 W 1 150 - 65 ... + 150 - 65 ... + 150 ≤ 65 °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 85 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
Semiconductor Group
1
Dec-16-1996
BFQ 19S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown
voltage Values typ. max. Unit
V(BR)CEO
15 100 -
V µA 100 nA 100 µA 10 40 220
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
Semiconductor Group
2
Dec-16-1996
BFQ 19S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
f...