DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ226 NPN video transistor
Product specification Supersedes data of 1996 July 18 Fi...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ226 NPN video transistor
Product specification Supersedes data of 1996 July 18 File under Discrete Semiconductors, SC05 1996 Sep 04
Philips Semiconductors
Product specification
NPN video transistor
APPLICATIONS Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. PINNING PIN 1 2 3 4 base emitter collector Fig.1 Simplified outline SOT223. DESCRIPTION emitter
BFQ226
handbook, halfpage
4
1
Top view
2
3
MSB002 - 1
QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base
voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C IC = 25 mA; VCE = 10 V IC = 0; VCB = 10 V CONDITIONS open emitter − − − 1 1.7 − TYP. MAX. 100 100 3 − − 175 V mA W GHz pF °C UNIT
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 100 Ω open collector see Fig.2 see Fig.2 up to Ts = 60 °C; note 1; see Fig.3 − − − − − − −65 − MIN. MAX. 100 95 3 100 100 3 +175 175 V V V mA mA W...