BFQ231

DISCRETE SEMICONDUCTORS DATA SHEET BFQ231; BFQ231A NPN video transistors Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02 Philips Semiconductors Product specification NPN video transistors FEATURES High breakdown voltages Low output capacitance High gain bandwidth Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Buffer/driver in high-resolution colour graphics monitors. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ231 BFQ231A VCER collector-emitter voltage BFQ231 BFQ231A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency BFQ231 BFQ231A Note Ts ≤ 65 °C; note 1 IC = 50 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; Tamb = 25 °C 1 0.8 RBE = 100 Ω − − − − 20 CONDITIONS open emitter − − DESCRIPTION NPN video transistor in a SOT54 (TO-92) plastic package. PNP complements: BFQ251 and BFQ251A. PINNING PIN 1 2 3 base collector emitter DESCRIPTION BFQ231; BFQ231A page 1 2 3 MSB033 Fig.1 Simplified outline (SOT54; TO-92). MIN. − − − − − − TYP. MAX. 100 115 95 110 300 1 − − − UNIT V V V V mA W 35 1.4 1.2 GHz GHz 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. 1997 Oct 02 2 Philips Semiconductors Product specification NPN video transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base vo...