DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ241 PNP video transistor
Product specification Supersedes data of 1995 Oct 09 Fil...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ241 PNP video transistor
Product specification Supersedes data of 1995 Oct 09 File under Discrete Semiconductors, SC05 1996 Sep 04
Philips Semiconductors
Product specification
PNP video transistor
APPLICATIONS Primarily intended for buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 3-lead plastic SOT54 package. PINNING PIN 1 2 3 base collector emitter DESCRIPTION
1 2 3
BFQ241
MSB033
Fig.1 Simplified outline SOT54.
QUICK REFERENCE DATA SYMBOL VCBO IC Ptot fT Cre Tj PARAMETER collector-base
voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C IC = −25 mA; VCE = −10 V IC = 0; VCB = −10 V CONDITIONS open emitter − − − 1 1.7 − TYP MAX −100 −100 1.15 − − 150 V mA W GHz pF °C UNIT
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 100 Ω open collector see Fig.2 see Fig.2 up to Ts = 60 °C; note 1; see Fig.3 − − − − − − −65 − MIN MAX −100 −95 −3 −100 −100 1.15 +150 150 V V V mA mA W °C °C UNIT
1996 Sep 04
2
Philips Semiconductors
Prod...