isc Silicon NPN RF Transistor
DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Mini...
isc Silicon NPN RF Transistor
DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in MATV or CATV
amplifiers and RF
communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
20
V
VCEO Collector-Emitter
Voltage
15
V
VEBO Emitter-Base
Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
200
mA
2.25
W
175
℃
Tstg
Storage Temperature Range
-65~150
℃
BFQ591
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN RF Transistor
BFQ591
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CES Collector-Emitter Breakdown
Voltage IC= 0.1mA ; IB= 0
15
V
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 0.1m A ; IE= 0
20
V
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 0.1m A ; IC= 0
3
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
hFE
DC Current Gain
IC= 70mA ; VCE= 8V
60
250
fT
Current-Gain—Bandwidth Product
IC= 70mA ; VCE= 12V; f= 1GHz
7
GHz
PG
Power Gain
IC= 70mA;VCE= 12V; f= 900MHz
11
dB
PG
Power Gain
IC= 70mA;VCE= 12V; f= 2GHz
5.5
dB
Cre
Feedback Capacitance
IE= 0 ; VCB= 12V; f= 1MHz
0.8
pF
︱S21e︱2 Insertion Power Gain
IC= 70mA ; VCE= 12V; f= 1GHz
10...
