BFQ65

BFQ65 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 300 150 –65 to +150 Unit V V V mA mW °C °C Symbol RthJA Maximum 300 Unit K/W 1 (5) BFQ65 Electrical DC Characteristics Tamb = 25°C Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = C Collector-base cut-off current VCB = 15 V, IE = 0 Emitter-base cut-off current VEB = 1 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA DC forward current transfer ratio IC = 15 mA, VCE = 5 V Symbol Min. Typ. Max. Unit ICES 100 mA ICBO IEBO 100 nA 1 mA V(BR)CEO 10 V VCEsat 0.1 0.4 V hFE 60 100 150 Electrical AC Characteristics Tamb = 25°C Parameters / Test Conditions Symbol Min. Ty...