BFQ67/BFQ67R/BFQ67W
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precauti...
BFQ67/BFQ67R/BFQ67W
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise small signal
amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
Features
D Small feedback capacitance D Low noise figure D High transition frequency
1 1
13 581 94 9280 9510527
13 581
2
3
3
2
BFQ67 Marking: V2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
BFQ67R Marking: R67 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
1
13 652
13 570
2
3
BFQ67W Marking: WV2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter
Document Number 85022 Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (12)
BFQ67/BFQ67R/BFQ67W
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 200 150 –65 to +150 Unit V V V mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
www.vishay.de FaxBack +1-408-970-5600 2 (12)
Document Number 85022 Rev. 3, 20-Jan-...