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BFQ67R

Vishay Telefunken

Silicon NPN Planar RF Transistor

BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precauti...


Vishay Telefunken

BFQ67R

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Description
BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Small feedback capacitance D Low noise figure D High transition frequency 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFQ67 Marking: V2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFQ67R Marking: R67 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 BFQ67W Marking: WV2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Document Number 85022 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (12) BFQ67/BFQ67R/BFQ67W Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 200 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W www.vishay.de FaxBack +1-408-970-5600 2 (12) Document Number 85022 Rev. 3, 20-Jan-...




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