NPN Silicon RF Transistor
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BFQ 74
For low-noise amplifiers in the GHz range, and broadband analog and digital applica...
NPN Silicon RF Transistor
q
BFQ 74
For low-noise
amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. Hermetically sealed ceramic package. HiRel/Mil screening available.
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ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 74 Marking 74 Ordering Code (tape and reel) Q62702-F788 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter
voltage Collector-emitter
voltage, VBE = 0 Collector-base
voltage Emitter-base
voltage Collector current Peak collector current, f ≥ 10 MHz Base current Total power dissipation, TS ≤ 115 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB Ptot Tj TA Tstg
Values 16 25 25 2 35 45 5 300 175 – 65 … + 175 – 65 … + 175
Unit V
mA
mW ˚C
280 200
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ BFQ 74 74
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 15 V, IE = 0 Emitter-base cu...