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BFR180W Datasheet

Part Number BFR180W
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Datasheet BFR180W DatasheetBFR180W Datasheet (PDF)

BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 180W RDs Q62702-F1490 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base c.

  BFR180W   BFR180W






Part Number BFR180W
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon RF Transistor
Datasheet BFR180W DatasheetBFR180W Datasheet (PDF)

BFR180W NPN Silicon RF Transistor  For low-power amplifiers in mobile 3 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA  fT = 7 GHz F = 2.1 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR180W Maximum Ratings Parameter Marking RDs 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT323 Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 mW °C mA Unit V 3=C Coll.

  BFR180W   BFR180W







NPN Silicon RF Transistor

BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 180W RDs Q62702-F1490 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 ≤ 790 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 126 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V µA 100 nA 100 µA 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol mi.


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