BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions...
BFR181T/BFR181TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband
amplifiers at collector currents from 0.5 mA to 12 mA.
Features
D Low noise figure D High power gain
1 1
13 581 94 9280
13 652
13 570
2
3
2
3
BFR181T Marking: RF Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter
BFR181TW Marking: WRF Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 15 10 2 20 2 160 150 –65 to +150 Unit V V V mA mA mW °C °C
Tamb ≤ 78 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
Document Number 85024 Rev. 2, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (4)
BFR181T/BFR181TW
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown
voltage Collector-emitter saturation
voltage DC forward current transfer ratio Test Co...