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BFR183T

Infineon Technologies AG

NPN Silicon RF Transistor


Description
BFR183T NPN Silicon RF Transistor Preliminary data  For low-noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR183T Maximum Ratings Parameter Marking RHs 1=B Pin Configuration 2=E 3=C Symb...



Infineon Technologies AG

BFR183T

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