BFR183W

BFR 183W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183W RHs Q62702-F1493 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 ≤ 210 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 56 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 183W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteri...