BFR193TW

BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers. Features D Low noise figure D High transition frequency fT = 8 GHz D Excellent large-signal behaviour 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR193T Marking: RC Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR193TW Marking: WRC Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 45 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient mounted on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 250 Unit K/W Document Number Rev. 2, 14-Feb-00 www.vishay.de FaxBack +1-408-970-5600 1 (4) BFR193T/BFR193TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitt...