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BFR380 Datasheet

Part Number BFR380
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon RF Transistor
Datasheet BFR380 DatasheetBFR380 Datasheet (PDF)

BFR380F NPN Silicon RF Transistor Preliminary data  High current capability and low figure for wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz  Low noise figure: 1.1 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380F Maximum Ratings Parameter Marking FCs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package TSFP-3 Uni.

  BFR380   BFR380






Part Number BFR380T
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon RF Transistor
Datasheet BFR380 DatasheetBFR380T Datasheet (PDF)

BFR380T NPN Silicon RF Transistor Preliminary data  High current capability and low figure for 3 wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz  Low noise figure: 1.1 dB at 1.8 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380T Maximum Ratings Parameter Marking FCs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package S.

  BFR380   BFR380







Part Number BFR380L3
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Linear Low Noise Silicon Bipolar RF Transistor
Datasheet BFR380 DatasheetBFR380L3 Datasheet (PDF)

Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free thin small leadless package • Qualification report according to AEC-Q101 available BFR380L3 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380L3 Marking .

  BFR380   BFR380







Part Number BFR380F
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Linear Low Noise Silicon Bipolar RF Transistor
Datasheet BFR380 DatasheetBFR380F Datasheet (PDF)

Linear Low Noise Silicon Bipolar RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5 V supply voltage • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available BFR380F 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type B.

  BFR380   BFR380







Part Number BFR38
Manufacturers SGS-ATES
Logo SGS-ATES
Description PNP Transistor
Datasheet BFR380 DatasheetBFR38 Datasheet (PDF)

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  BFR380   BFR380







NPN Silicon RF Transistor

BFR380F NPN Silicon RF Transistor Preliminary data  High current capability and low figure for wide dynamic range application  Low voltage operation  Ideal for low phase noise oscillators up to 3.5 GHz  Low noise figure: 1.1 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380F Maximum Ratings Parameter Marking FCs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package TSFP-3 Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS  95°C 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value V mA mW °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Unit Junction - soldering point2)  145 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-24-2003 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V hFE 60 100 200 IEBO 1 µA ICBO 100 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jan-24-2003 BFR380F Electrical Characteristics at TA = 25°C, unless otherwise s.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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