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BFR505T Datasheet

Part Number BFR505T
Manufacturers NXP
Logo NXP
Description NPN 9 GHz wideband transistor
Datasheet BFR505T DatasheetBFR505T Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication.

  BFR505T   BFR505T






Part Number BFR505
Manufacturers NXP
Logo NXP
Description NPN 9 GHz wideband transistor
Datasheet BFR505T DatasheetBFR505 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BFR505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION 1 BFR505 PINNING PIN 1 2 3 base emitter collector fpage DESCRIPTION Code: N30 3 2 MSB003 The BFR505 is an npn silicon planar epit.

  BFR505T   BFR505T







NPN 9 GHz wideband transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT416 (SC-75) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 IC = 5 mA; VCE = 6 V; Tj = 25 °C IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C RBE = 0 CONDITIONS open emitter MIN. − − − − 60 − TYP. − − − − 120 9 17 1.2 PINNING PIN 1 2 3 base emitter collector Marking code: N0. BFR505T DESCRIPTION NPN transistor in a plastic SOT416 (SC-75) package. fpage 3 DESCRIPTION 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 20 15 18 150 250 − − 1.7 UNIT V V mA mW GHz dB dB IC = 5 mA; VCE = 6 V; f = 900 MHz; − Tamb = 25 °C IC = 1.25 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCE VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering.


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