BFR720L3RH

NPN Silicon Germanium RF Transistor Target data sheet High gain ultra low noise RF transistor for low current operation Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more Optimum gain and noise figure at low current operation Ideal for WLAN applications Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz High maximum stable and available gain Gms = 24 dB at 1.8 GHz, Gma = 16.5 dB at 6 GHz 150 GHz fT-Silicon Germanium technology Extremly small and flat leadless package height 0.32 mm max. Pb-free (RoHS compliant) package Qualified according AEC Q101 BFR720L3RH 3 12 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR720L3RH Marking Pin Configuration R3 1=B 2=C 3=E Package TSLP-3-9 1 2008-07-04 BFR720L3RH Maximum Ratings Parameter Collector-emitter voltage TA > 0 °C TA ≤ 0 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ tbd Operating junction temperature range Storage junction temperature range Thermal Resistance Parameter Junction - soldering point2) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tjo Tjstg Symbol RthJS Value 4 3.5 13 13 1.2 20 2 80 -65 ... 150 -65 ... 150 Value ≤ tbd Unit V mA mW °C Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Col...