BFS17

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 1 GHz wideband transistor Product specification BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. APPLICATIONS  A wide range of RF applications such as: – Mixers and oscillators in TV tuners – RF communications equipment. PINNING PIN 1 base 2 emitter 3 collector DESCRIPTION handbook, halfpage 3 1 Top view 2 MSB003 Marking code: E1p. Fig.1 SOT23. QUICK REFERENCED DATA SYMBOL PARAMETER VCBO VCEO IC Ptot fT F collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency noise figure open emitter open base CONDITIONS up to Ts = 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 5 V; RS = 50 ; f = 500 MHz; Tj = 25 C TYP.     1 4.5 MAX. 25 15 25 300   UNIT V V mA mW GHz dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector up to Ts = 70 C; note 1 Note to the Quick reference data and the Limiting values 1. Ts is the temperature at the soldering point of the collector pin. MIN.       65  MAX. 25 15 2.5 2...