BFU530XR

BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.65 dB at 900 MHz  Maximum stable gain 21 dB at 900 MHz  11 GHz fT silicon technology 1.3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  87 C hFE DC current gain IC = 10 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 15 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 10 40 mA [1] - - 450 mW 60 95 200 - 0.36 - pF - 11 - GHz NXP Semiconductors BFU530XR NPN wideband silicon RF transistor Table 1. Quick reference data …continued Tamb = 25 C u...