BFW11

BFW10 – BFW11 N CHANNEL SILICON FETS DESCRIPTION : Symmetrical N-CHANNEL silicon planar epitaxial junction field-effect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to 300 MHz). Their very low frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector preamplifiers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS -VGSO VDGO IDS IG Ptot Tstg Tj Drain-Source Voltage Gate-Source Voltage (Open Drain) Drain-Gate Voltage (Open Source) Drain Current Gate Current Total Power Dissipation at Tamb = 25°C Storage Temperature Range Junction Temperature THERMAL CHARACTERISTICS Symbol Ratings RthJA Thermal Resistance, junction-ambient Value 30 30 30 20 10 250 -65 to 175 175 Unit V V V mA mA mW °C °C Value 590 Unit K/W 19/08/2014 COMSET SEMICONDUCTORS 1/3 BFW10 – BFW11 ELECTRICAL CHARACTERISTICS Tj = 25°C unless otherwise specified Symbol Ratings -IGSS Gate Cutoff Current IDSS Drain Current -VGS Gate Source Voltage -V(P)GS Gate Source Cutoff Voltage Test Condition(s) -VGS = 20V VDS = 0 -VGS = 20V ; VDS = 0 Tj = 150°C BFW10 BFW11 BFW10 BFW11 VDS = 15V VGS = 0 BFW10 BFW11 ID= 400µA BFW10 VDS = 15V ID= 50µA BFW11 VDS = 15V ID= 0.5nA BFW10 BFW11 Min Typ Max Unit - - 0.1 nA - 8 4 2 1.25 - - - 0.5 µA 20 mA 10 7.5 V 4 8 V 6 SMALL SIGNAL CHARACTERISTICS Tj = 25°C unless otherwise specified Symbol Ratings Test Condition(s) VDS ...