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BFX30 Datasheet

Part Number BFX30
Manufacturers NXP
Logo NXP
Description PNP switching transistor
Datasheet BFX30 DatasheetBFX30 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max.600 mA) • Low voltage (max. 65 V). APPLICATIONS • Switching applications. DESCRIPTION PNP transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BFX30 DESCRIPTION collector, connected to case 1 hand.

  BFX30   BFX30






Part Number BFX30
Manufacturers CDIL
Logo CDIL
Description PNP SILICON PLANAR TRANSISTOR
Datasheet BFX30 DatasheetBFX30 Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR BFX30 TO-39 Metal Can Package INTENDED FOR SWITCHING APPLICATIONS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Peak ICM Emitter Curent (Peak Value) IEM Total Device Dissipation @ Ta=25ºC Ptot Operating And.

  BFX30   BFX30







Part Number BFX30
Manufacturers Micro Electronics
Logo Micro Electronics
Description (BFXxx) Medium Power Amplifiers
Datasheet BFX30 DatasheetBFX30 Datasheet (PDF)

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  BFX30   BFX30







PNP switching transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max.600 mA) • Low voltage (max. 65 V). APPLICATIONS • Switching applications. DESCRIPTION PNP transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BFX30 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −10 mA; VCE = −400 mV IC = −50 mA; VCE = −10 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 10 mA open emitter open base CONDITIONS MIN. − − − − 50 100 − TYP. − − − − 90 − − MAX. −65 −65 −600 600 200 − 300 MHz ns UNIT V V mA mW 1997 Apr 16 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient tem.


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