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BFX34 Datasheet

HIGH CURRENT GENERAL PURPOSE TRANSISTOR

HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • Silicon Epitaxial NPN Transistor • High Speed, Low Saturation Switch • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 120V VCEO Collector – Emitter Voltage 60V VEBO Emitter – Base Voltage 6V IB Cont.


Seme LAB
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Seme LAB BFX34 Datasheet

HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • Silicon Epitaxial NPN Transistor • High Speed, Low Saturation Switch • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 120V VCEO Collector – Emitter Voltage 60V VEBO Emitter – Base Voltage 6V IB Continuous Base Current 1.0A IC Continuous Collector Current 2A ICM Peak Repetitive Collector Current 5A PD Total Power Dissipation at TA = 25°C 870mW TC = 25°C 5W TJ Junction Temperature Range 200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 200 35 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of.






® BFX34 SILICON NPN TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, t(s)power amplifiers, .


STMicroelectronics
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STMicroelectronics BFX34 Datasheet

® BFX34 SILICON NPN TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, t(s)power amplifiers, switching power supplies and relay drivers inverters. TO-39 lete ProducINTERNAL SCHEMATIC DIAGRAM lete Product(s) - ObsoABSOLUTE MAXIMUM RATINGS soSymbol Parameter ObVCBO Collector-Base Voltage (IE = 0) Value 120 Unit V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitter-Base Voltage (IC = 0) 6V IC Collector Current Ptot Total Dissipation at Tcase ≤ 25 oC Tamb ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 5 5 0.87 -65 to 200 200 A W W oC oC August 2001 1/4 BFX34 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-amb Max Max 35 oC/W 200 oC/W EL.






DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor FEATURES • High current (max. 2 A) • Low voltage (max. 60 V). APPLICATIONS • High-current swit.


NXP
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NXP BFX34 Datasheet

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor FEATURES • High current (max. 2 A) • Low voltage (max. 60 V). APPLICATIONS • High-current switching, e.g. inverters and switching regulators. 1 handbook, halfpage BFX34 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION DESCRIPTION NPN switching transistor in a TO-39 metal package. 3 2 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 2 A; VCE = 2 V IC = 0.5 A; VCE = 5 V; f = 100 MHz ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A CONDITIONS open emitter open base − − − − 40 .








 

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