HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadba...
HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband
amplifiers up to 2 GHz. ¥ For linear broadband
amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
BFY 193
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 193 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1610 Ordering Code: on request Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1701 (see Chapter Order Instructions for ordering example) Table 1 Parameter Collector-emitter
voltage Collector-emitter
voltage, VBE = 0 Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation, TS £ 104 °C 2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction soldering point 2)
1) 2)
Maximum Ratings Symbol Limit Values 12 20 20 2 80 10 1) 580 200 - 65 É + 200 - 65 É + 200 < 165 Unit V V V V mA mA mW °C °C °C K/W
VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS
The maximum permissible base current for VFBE measurements is 30 mA (spot measurement duration < 1 s).
TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Draft A03 1998-04-01
BFY 193
...