DISCRETE SEMICONDUCTORS
DATA SHEET
BGD601 CATV amplifier module
Product specification Supersedes data of February 1995 ...
DISCRETE SEMICONDUCTORS
DATA SHEET
BGD601 CATV amplifier module
Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1997 Apr 15
Philips Semiconductors
Product specification
CATV amplifier module
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. DESCRIPTION Hybrid high dynamic range amplifier module designed for applications in CATV systems operating over a frequency range of 40 to 600 MHz at a
voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz f = 600 MHz VB = 24 V 12 12.7 − MIN. 13 − 435 MAX. PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output
1 2 3 5
BGD601
DESCRIPTION
fpage
7 8 9
MSA319 - 1
Side view
Fig.1 Simplified outline.
UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input
voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. 65 +100 +100 MAX. °C °C UNIT dBmV
1997 Apr 15
2
Philips Semiconductors
Product specification
CATV amplifier module
CHARACTERISTICS Table 1 Bandwidth 40 to 600 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 600 MHz SL FL S11 f = 40 to 600 MHz f = 40 to ...