BGD702

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702; BGD702MI CATV amplifier modules Product specification Supersedes data of 1998 Mar 13 1999 Mar 22 Philips Semiconductors Product specification CATV amplifier modules FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. DESCRIPTION Hybrid amplifier modules designed for CATV systems operating over a frequency range of 40 to 750 MHz at a voltage supply of 24 V (DC). Both modules are electrically identical, only the pinning is different. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz f = 750 MHz VB = 24 V PIN BGD702 1 2 3 5 7 8 9 input common common +VB common common output BGD702MI output common common +VB common common input PINNING - SOT115J DESCRIPTION BGD702; BGD702MI halfpage 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline. MIN. 18 18.5 − − MAX. 19 435 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 65 +100 +100 UNIT dBmV °C °C 1999 Mar 22 2 Philips Semiconductors Product specification CATV amplifier modules CHARACTERISTICS Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of freque...