BGD702MI

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702MI CATV amplifier module Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC16 1998 Mar 13 Philips Semiconductors Product specification CATV amplifier module FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability Mirrored image pinning of the BGD702. APPLICATIONS CATV systems operating in the 40 to 750 MHz frequency range. handbook, halfpage BGD702MI PINNING - SOT115J PIN 1 2 3 5 7 8 9 output common common +VB common common input DESCRIPTION DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz f = 750 MHz VB = 24 V 18 18.5 − MIN. 19 − 435 MAX. UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. 65 +100 +100 MAX. °C °C UNIT dBmV 1998 Mar 13 2 Philips Semiconductors Product specification CATV amplifier module CHARACTERISTICS Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses C...