DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD802N CATV amplifier module
Product specification Supersede...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD802N CATV amplifier module
Product specification Supersedes data of 1997 Sep 03 1999 Mar 22
Philips Semiconductors
Product specification
CATV amplifier module
FEATURES Extremely flat gain response Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS CATV systems operating in the 40 to 860 MHz frequency range.
handbook, halfpage
BGD802N
PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION
1
2
3
5
7
8
9
DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply
voltage of 24 V (DC).
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz f = 860 MHz VB = 24 V 18 18.5 − MIN. 19 − 410 MAX. UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VB Vi Tstg Tmb supply
voltage RF input
voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. 25 65 +100 +100 MAX. V dBmV °C °C UNIT
1999 Mar 22
2
Philips Semiconductors
Product specification
CATV amplifier module
CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input r...