DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D252
BGD816 CATV amplifier module
Objective specification 2000 A...
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D252
BGD816 CATV amplifier module
Objective specification 2000 Apr 12
Philips Semiconductors
Objective specification
CATV amplifier module
FEATURES Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION
Side view
MSA319
BGD816
PINNING - SOT115J PIN 1 2 and 3 5 7 and 8 9 input common +VB common output DESCRIPTION
handbook, halfpage
1
2
3
5
7
8
9
Hybrid amplifier module in a SOT115J package operating with a
voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 21.2 22 380 MAX. 21.8 23 410 UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply
voltage RF input
voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. MAX. 30 70 +100 +100 V dBmV °C °C UNIT
2000 Apr 12
2
Philips Semiconductors
Objective specification
CATV amplifier module
CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz; note 1 f = 45 to 100 MHz...