DISCRETE SEMICONDUCTORS
DATA SHEET
BGE788 CATV amplifier module
Preliminary specification File under Discrete Semicondu...
DISCRETE SEMICONDUCTORS
DATA SHEET
BGE788 CATV amplifier module
Preliminary specification File under Discrete Semiconductors, SC16 1997 May 05
Philips Semiconductors
Preliminary specification
CATV amplifier module
FEATURES Excellent linearity Extremely low noise High gain Excellent return loss properties. APPLICATIONS Single module line extender in CATV systems operating over a frequency range of 40 to 750 MHz.
handbook, halfpage
BGE788
PINNING SOT115J PIN 1 2, 3 5 7, 8 9 input common +VB common output DESCRIPTION
DESCRIPTION The BGE788 is a hybrid high dynamic range amplifier module operating at a
voltage supply of +24 V in a SOT115J package. The high gain module consists of two cascaded stages both in cascode configuration.
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Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER f = 50 MHz f = 750 MHz VB = +24 V CONDITIONS MIN. 33.5 34 − − 320 MAX. 34.5 UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tmb Tstg RF input
voltage operating mounting-base temperature storage temperature PARAMETER − −20 −40 MIN. MAX. 55 +100 +100 UNIT dBmV °C °C
1997 May 05
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Philips Semiconductors
Preliminary specification
CATV amplifier module
CHARACTERISTICS Bandwidth 40 to 750 MHz; VB = +24 V; Tcase = 30 °C; ZS = ZL = 75 Ω. SYMBOL Gp SL FL S11 power gain slope cable equivalent flatness of frequency response input return lo...