BGM1012

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage MBD128 BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 2002 Sep 06 Philips Semiconductors www.DataSheet4U.com Product specification MMIC wideband amplifier FEATURES Internally matched to 50 Ω Very wide frequency range (4 Ghz at 3 dB bandwidth) Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness) 10 dBm saturated output power at 1 GHz High linearity (18 dBm IP3(out) at 1 GHz) Low current (14.6 mA) Unconditionally stable. APPLICATIONS LNB IF amplifiers Cable systems ISM General purpose. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. QUICK REFERENCE DATA SYMBOL VS IS s212 NF PL(sat) PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION CONDITIONS 3 14.6 20.1 4.8 9.7 TYP. 1 Top view Marking code: C2-. 6 BGM1012 PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in DESCRIPTION 6 5 4 1 3 2 3 MAM455 4 2, 5 Fig.1 Simplified outline (SOT363) and symbol. MAX. 4 − − − − UNIT V mA dB dB dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Sep 06 2 Philips Semiconductors www.D...