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BGSX22G2A10

Infineon

DPDT Antenna Cross Switch

SP001646670 BGSX22G2A10 DPDT Antenna Cross Switch Features  RF CMOS DPDT antenna cross switch with power handling capab...


Infineon

BGSX22G2A10

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Description
SP001646670 BGSX22G2A10 DPDT Antenna Cross Switch Features  RF CMOS DPDT antenna cross switch with power handling capability of up to 36.5 dBm  Suitable for multi-mode LTE and WCDMA multi antenna applications  Ultra-low insertion loss and harmonics generation  0.1 to 6.0 GHz coverage  High port-to-port-isolation  No decoupling capacitors required if no DC applied on RF lines  General Purpose Input-Output (GPIO) Interface  Small form factor 1.15mm x 1.55mm  No power supply blocking required  High EMI robustness  RoHS and WEEE compliant package Description The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 2.3V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF po...




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