DISCRETE SEMICONDUCTORS
DATA SHEET
BGY583 CATV amplifier module
Product specification Supersedes data of 1997 Apr 14 Fi...
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY583 CATV amplifier module
Product specification Supersedes data of 1997 Apr 14 File under Discrete Semiconductors, SC16 1998 Feb 25
Philips Semiconductors
Product specification
CATV amplifier module
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Optimal reliability ensured by TiPtAu metallized crystals. DESCRIPTION Hybrid amplifier module for CATV systems operating over a frequency range of 40 to 550 MHz at a
voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz f = 550 MHz VB = 24 V MIN. 13.5 14.5 − TYP. − − 220 PINNING - SOT115J PIN 1 2 3 5 7 8 9 DESCRIPTION
fpage
BGY583
PIN CONFIGURATION
input common common +VB common common output
1
2
3
8 5 7 9
Side view
MSA319
Fig.1 Simplified outline.
MAX. 14.5 − 240
UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input
voltage storage temperature mounting base operating temperature PARAMETER − −40 −20 MIN. MAX. 65 +100 +100 UNIT dBmV °C °C
1998 Feb 25
2
Philips Semiconductors
Product specification
CATV amplifier module
CHARACTERISTICS Bandwidth 40 to 550 MHz; Tmb = 30 °C; ZS = ZL = 75 Ω SYMBOL Gp SL FL S11 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 550 MHz f = 40 to 550 MHz f = 40 to 550 MHz f = ...