DISCRETE SEMICONDUCTORS
DATA SHEET
BGY66B CATV amplifier module
Product specification Supersedes data of 1995 Sep 11 Fi...
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY66B CATV amplifier module
Product specification Supersedes data of 1995 Sep 11 File under Discrete Semiconductors, SC16 1997 Apr 14
Philips Semiconductors
Product specification
CATV amplifier module
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS Intended as a reverse amplifier for use in two-way systems. DESCRIPTION Hybrid high dynamic range amplifier module designed for applications in CATV systems with a bandwidth of 5 to 120 MHz operating with a
voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 10 MHz VB = 24 V MIN. 24.5 115 PINNING - SOT115J PIN 1 2 3 5 7 8 9 DESCRIPTION input common common +VB common common output
Side view
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BGY66B
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MSA319
Fig.1 Simplified outline.
MAX. 25.5 135
UNIT dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input
voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. 65 +100 +100 MAX. °C °C UNIT dBmV
1997 Apr 14
2
Philips Semiconductors
Product specification
CATV amplifier module
CHARACTERISTICS Table 1 Bandwidth 5 to 120 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses output return losses com...