DISCRETE SEMICONDUCTORS
DATA SHEET
BGY87B CATV amplifier module
Product specification Supersedes data of February 1995 ...
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY87B CATV amplifier module
Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1997 Apr 10
Philips Semiconductors
Product specification
CATV amplifier module
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier module for CATV systems operating over a frequency range of 40 to 450 MHz at a
voltage supply of +24 V. QUICK REFERENCE DATA SYMBOL Gp Itot Note PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz VB = +24 V; note 1 − MIN. 26.2 PINNING - SOT115J PIN 1 2 3 5 7 8 9 DESCRIPTION input common common +VB common common output
1 2 3 5
fpage
BGY87B
PIN CONFIGURATION
7 8 9
MSA319 - 1
Side view
Fig.1 Simplified outline.
MAX. 27.8 340
UNIT dB mA
1. The module normally operates at VB = +24 V, but is able to withstand supply transients up to +30 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input
voltage storage temperature mounting base operating temperature PARAMETER − −40 −20 MIN. MAX. 55 +100 +100 UNIT dBmV °C °C
1997 Apr 10
2
Philips Semiconductors
Product specification
CATV amplifier module
CHARACTERISTICS Table 1 Bandwidth 40 to 450 MHz; Tcase = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITION...