BGY916

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY916 UHF amplifier module Product specification Supersedes data of 1997 Jul 11 1998 May 27 Philips Semiconductors Product specification UHF amplifier module BGY916 FEATURES 26 V nominal supply voltage 16 W output power into a load of 50 Ω with an RF drive power of 25 mW. APPLICATIONS Base station transmitting equipment operating in the 920 to 960 MHz frequency range. DESCRIPTION PINNING - SOT365A PIN 1 2 3 4 flange RF input VS1 VS2 RF output ground DESCRIPTION handbook, halfpage The BGY916 is a three-stage UHF amplifier module in a SOT365A package. It consists of one NPN silicon planar transistor die and two silicon MOS-FET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry. 1 2 3 4 MSA447 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 920 to 960 VS1; VS2 (V) 26 PL (W) 16 Gp (dB) ≥28 η (%) ≥35 ZS; ZL (Ω) 50 1998 May 27 2 Philips Semiconductors Product specification UHF amplifier module BGY916 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature PARAMETER − − − − −30 −10 MIN. 28 28 80 25 +100 +90 MAX. V V mW W °C °C UNIT CHARACTERISTICS Tmb = 25 °C; VS1 = VS2 = 26 V; PL = 16 W; ZS = ZL = 50 Ω unless otherwise spec...