DatasheetsPDF.com

BL3N80 Datasheet

Part Number BL3N80
Manufacturers GME
Logo GME
Description N-Channel Power Mosfet
Datasheet BL3N80 DatasheetBL3N80 Datasheet (PDF)

2.5A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 19 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 11 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS dv/dt PD .

  BL3N80   BL3N80






N-Channel Power Mosfet

2.5A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 19 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 11 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N80 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 800 ±30 2.5 10 170 4.5 70 62.5 +150 -55 to +150 Units V V A A mJ V/ns W ℃/W ℃ ℃ X117 Rev.A www.gmesemi.com 1 Production specification 2.5A,800V N-Channel Power Mosfet BL3N80 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specif.


2018-05-18 : BL2303    2N7002    BL2300    BL9N30F    BL8N65F    BL8N80F    BL8N60F    BL7N80F    BL8N40F    BL6N80F   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)