2.5A,800V N-Channel Power Mosfet
FEATURES
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 19 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 11 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL3N80
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS dv/dt PD .
N-Channel Power Mosfet
2.5A,800V N-Channel Power Mosfet
FEATURES
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 19 nC )
Pb
Lead-free
Low reverse transfer Capacitance ( CRSS = typical 11 pF )
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL3N80
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
Gate -Source voltage
ID Continuous Drain Current
IDM EAS dv/dt PD RθJA TJ
Pulsed Drain Current
Avalanche Energy
Single Pulsed
Peak Diode Recovery dv/dt
Power Dissipation
Thermal resistance,Junction-to-Ambient
Junction Temperature
TOPR, Tstg Operating and Storage Temperature
TO-220AB
Value 800 ±30 2.5 10 170 4.5 70 62.5 +150 -55 to +150
Units V V A A mJ V/ns W ℃/W ℃ ℃
X117 Rev.A
www.gmesemi.com
1
Production specification
2.5A,800V N-Channel Power Mosfet
BL3N80
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specif.