4A,500V N-Channel Power Mosfet
FEATURES
RDS(ON) =2.0Ω@ VGS = 10V High Switching Speed 100% Avalanche Tested
Pb
L...
4A,500V N-Channel Power
Mosfet
FEATURES
RDS(ON) =2.0Ω@ VGS = 10V High Switching Speed 100% Avalanche Tested
Pb
Lead-free
Production specification
BL4N50F
ITO-220AB
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source
voltage
VGSS
ID
IDM EAS EAR dv/dt
Gate -Source
voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient
θJA Junction to Ambient
θJC Junction to Case
TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature
Value 500
±30 4 16 216 8.5 4.5 28 62.5 62.5
4.5
+150
-55 to +150
Units V V A A mJ V/ns W ℃/W ℃/W ℃/W ℃ ℃
S071 Rev.A
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Production specification
4A,500V N-Channel Power
Mosfet
BL4N50F
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
OFF CHARACTERISTICS Drain-...