BLA1011S-200

www.DataSheet4U.com BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Conditions tp = 50 µs; δ = 2 % tp = 128 µs; δ = 2 % tp = 340 µs; δ = 1 % CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. VDS (V) 36 36 36 PL (W) 200 250 250 Gp (dB) 15 14 14 ηD (%) 50 50 50 tr (ns) 35 35 35 tf (ns) 6 6 6 1.2 Features s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power ≥ 200 W x Gain ≥ 13 dB x Efficiency ≥ 45 % x Rise time ≤ 50 ns x Fall time ≤ 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mounting flange eliminates DC isolators, reducing common mode inductance 1.3 Applications s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range. www.DataSheet4U.com Philips Semiconductors BLA1011-200; BLA1011S-200 Avionics LDMOS transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLA1011-200 (SOT502A) 1 3 2 2 3 sym039 1 BLA10...