BLA6G1011-200R

BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C. Test signal f (MHz) VDS PL Gp D tr (V) (W) (dB) (%) (ns) Typical RF performance in a class-AB production test circuit for SOT502A pulsed RF 1030 to 1090 28 200 20 65 10 Typical RF performance in a Gullwing application for SOT502C and SOT502D pulsed RF 1030 to 1090 28 200 20 65 15 tf (ns) 6 6 1.2 Features and benefits  Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:  Output power = 200 W  Power gain = 20 dB  Efficiency = 65 %  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for b...