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BLC10G18XS-360AVT Datasheet

Part Number BLC10G18XS-360AVT
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC10G18XS-360AVT DatasheetBLC10G18XS-360AVT Datasheet (PDF)

BLC10G18XS-360AVT Power LDMOS transistor Rev. 1 — 30 November 2017 Product data sheet 1. Product profile 1.1 General description 360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.6 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (.

  BLC10G18XS-360AVT   BLC10G18XS-360AVT






Power LDMOS transistor

BLC10G18XS-360AVT Power LDMOS transistor Rev. 1 — 30 November 2017 Product data sheet 1. Product profile 1.1 General description 360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.6 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 56 17.0 50.5 29.5 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-distor.


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