Power LDMOS transistor
BLC10G18XS-550AVT
Power LDMOS transistor
Rev. 1 — 21 December 2017
Product data sheet
1. Product profile
1.1 General ...
Description
BLC10G18XS-550AVT
Power LDMOS transistor
Rev. 1 — 21 December 2017
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 800 mA (main); VGS(amp)peak = 0.95 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
28
91
16.5
49.3
29.4 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digita...
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