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BLC10G27LS-320AVT Datasheet

Part Number BLC10G27LS-320AVT
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC10G27LS-320AVT DatasheetBLC10G27LS-320AVT Datasheet (PDF)

BLC10G27LS-320AVT Power LDMOS transistor Rev. 2 — 1 December 2017 Product data sheet 1. Product profile 1.1 General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2500 to 2700 28 50 16 D (%) 45 ACPR (dBc) 30 [1] [1] Test si.

  BLC10G27LS-320AVT   BLC10G27LS-320AVT






Power LDMOS transistor

BLC10G27LS-320AVT Power LDMOS transistor Rev. 2 — 1 December 2017 Product data sheet 1. Product profile 1.1 General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2500 to 2700 28 50 16 D (%) 45 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Decoupling leads to enable improved video bandwidth  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent pre-distortability  Internally matched for ease of use  Integrated ESD prote.


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