BLC6G20-110

www.DataSheet4U.com BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f (MHz) CW GSM EDGE 2-carrier W-CDMA VDS (V) PL (W) 100 48 (AV) 25 (AV) Gp (dB) 17 17.5 18 ηD (%) 51 40 32 ACPR400 (dBc) −60 ACPR600 (dBc) −70 EVM (%) 2.1 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] 1930 to 1990 28 1930 to 1990 28 1930 to 1990 28 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 = −37 dBc x ACPR = −40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use www.DataSheet4U.com Philips Semiconductors BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDG...