transistor. BLC6G20-140 Datasheet

BLC6G20-140 Datasheet PDF


BLC6G20-140
www.DataSheet4U.com
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV)
Gp ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 1930 to 1990 28 35.5
16.5 31
37 [1]
ACPR
(dBc)
40 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 1000 mA:
x Average output power = 35.5 W
x Power gain = 16.5 dB (typ)
x Efficiency = 31 %
x IMD3 = 37 dBc
x ACPR = 40 dBc
s Easy power control
s Integrated ESD protection
s Excellent ruggedness
s High efficiency
s Excellent thermal stability
s Designed for broadband operation (1800 MHz to 2000 MHz)
s Internally matched for ease of use


Part BLC6G20-140
Description UHF power LDMOS transistor
Feature BLC6G20-140; www.DataSheet4U.com BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006.
Manufacture Philips
Datasheet
Download BLC6G20-140 Datasheet


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BLC6G20-140
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2: Pinning
Pin Description
BLC6G20-140 (SOT895-1)
1 drain
2 gate
3 source
BLC6G20LS-140 (SOT896-1)
1 drain
2 gate
3 source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
11
3
[1]
22
3
sym112
1
3
[1]
2
1
2
3
sym112
Table 3: Ordering information
Type number Package
Name Description
Version
BLC6G20-140 -
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
BLC6G20LS-140 -
plastic earless flanged cavity package; 2 leads
SOT896-1
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- <tbd> A
65 +150 °C
- 225 °C
BLC6G20-140_6G20LS-140_1
Objective data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 9



BLC6G20-140
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
5. Thermal characteristics
Table 5: Thermal characteristics
Symbol Parameter
Conditions Type
Rth(j-case) thermal resistance Tcase = 80 °C; BLC6G20-140
from junction to case PL = 35.5 W BLC6G20LS-140
Min Typ Max Unit
<tbd> <tbd> <tbd> K/W
<tbd> 0.43 0.52 K/W
6. Characteristics
Table 6: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
V(BR)DSS drain-source breakdown
voltage
VGS(th)
VGSq
IDSS
IDSX
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
IGSS
gfs
RDS(on)
Crs
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
VGS = 0 V; ID = 0.5 mA
VDS = 10 V; ID = 216 mA
VDS = 28 V; ID = 950 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 13 V; VDS = 0 V
VDS = 10 V; ID = 10.8 A
VGS = VGS(th) + 3.75 V;
ID = 7.56 A
VGS = 0 V; VDS = 28 V;
f = 1 MHz
Min Typ Max Unit
65 - - V
<tbd> 2
<tbd> V
<tbd> <tbd> <tbd> V
- - 5 µA
32 39 -
A
- - 450 nA
- 13.5 - S
- 0.07 -
- <tbd> - pF
7. Application information
Table 7: Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 1932.5 MHz; f2 = 1942.5 MHz; f3 = 1977.5 MHz; f4 = 1987.5 MHz;
RF performance at VDS = 28 V; IDq = 1000 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter
Conditions
Min Typ Max Unit
PL(AV)
Gp
IRL
ηD
IMD3
ACPR
average output power
power gain
PL(AV) = 35.5 W
input return loss
PL(AV) = 35.5 W
drain efficiency
PL(AV) = 35.5 W
third order intermodulation distortion PL(AV) = 35.5 W
adjacent channel power ratio
PL(AV) = 35.5 W
- 35.5 - W
<tbd> 16.5 -
dB
- <tbd> <tbd> dB
<tbd> 31 -
%
- 37 <tbd> dBc
- 40 <tbd> dBc
7.1 Ruggedness in class-AB operation
The BLC6G20-140 and BLC6G20LS-140 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1000 mA; PL = 140 W (CW); f = 1990 MHz.
BLC6G20-140_6G20LS-140_1
Objective data sheet
Rev. 01 — 30 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
3 of 9




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