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BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data shee...
www.DataSheet4U.com
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 1930 to 1990
VDS (V) 28
PL(AV) (W) 35.5
Gp (dB) 16.5
ηD (%) 31
IMD3 (dBc) −37 [1]
ACPR (dBc) −40 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an IDq of 1000 mA: x Average output power = 35.5 W x Power gain = 16.5 dB (typ) x Efficiency = 31 % x IMD3 = −37 dBc x ACPR = −40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
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