www.DataSheet4U.com
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data sheet
...
www.DataSheet4U.com
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms (dBc) (dBc) −72 (%) 1.5
38.5 −62.5
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efficiency = 38.5 % x ACPR400 = −62.5 dBc x ACPR600 = −72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use
Philips Semiconductors
BLC6G20-75; BLC6G20LS-75
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outli...