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BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data shee...
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BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) Gp (W) 30 (dB) 16
ηD (%) 31
IMD3 ACPR (dBc) (dBc) −37 [1] −40 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply
voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x Efficiency = 31 % x IMD3 = −37 dBc x ACPR = −40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use
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Philips Semiconductors
BLC6G22-130; BLC6G22LS-130
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2...