BLC8G20LS-400AV

BLC8G20LS-400AV Power LDMOS transistor Rev. 4 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.4 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 32 85 15.5 44 31 [1] 1930 to 1990 32 85 15.5 44 35 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01% probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  Excellent electrical stability  Suitable for conventional and inverted Doherty  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capa...