BLC8G22LS-450AV

BLC8G22LS-450AV Power LDMOS transistor Rev. 6 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 450 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 1000 mA (main); VGS(amp)peak = 0.50 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2110 to 2170 28 85 14 41 33 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing excellent digital pre-d...