Power LDMOS transistor
BLC8G27LS-140AV
Power LDMOS transistor
Rev. 4 — 24 May 2017
Product data sheet
1. Product profile
1.1 General descrip...
Description
BLC8G27LS-140AV
Power LDMOS transistor
Rev. 4 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.
Test signal
f
VDS
PL(AV)
(MHz)
(V) (W)
1-carrier W-CDMA
2496 to 2690 28
28
Gp (dB) 15
D (%) 46
ACPR (dBc) 30 [1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection ...
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